Amplitude-phase canceling circuit for switch linearity

ABSTRACT

Amplitude-phase canceling circuit for switch linearity. In some embodiments, a radio-frequency switch circuit can include first and second switch arms, with each switch arm including a plurality of transistors arranged in series to form a stack between a first node and a second node. The first node of the first switch arm can be coupled to the first node of the second switch arm. The radio-frequency switch circuit can further include an amplitude-phase cancelling block implemented across one or more transistors of each switch arm, and configured such that a third harmonic resulting from an ON state of the first switch arm is substantially canceled by a third harmonic resulting from an OFF state of the second switch arm.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims priority to U.S. Provisional Application No.62/777,064 filed Dec. 7, 2018, entitled AMPLITUDE-PHASE CANCELINGCIRCUIT FOR SWITCH LINEARITY, the disclosure of which is herebyexpressly incorporated by reference herein in its respective entirety.

BACKGROUND Field

The present disclosure relates to radio-frequency (RF) switches.

Description of the Related Art

In radio-frequency (RF) applications, switches can be implemented withsemiconductor devices such as field-effect transistors (FETs). Suchswitches can allow, for example, routing of RF signals in wirelessdevices.

SUMMARY

In some implementations, the present disclosure relates to aradio-frequency switch circuit that includes first and second switcharms, with each switch arm including a plurality of transistors arrangedin series to form a stack between a first node and a second node. Thefirst node of the first switch arm is coupled to the first node of thesecond switch arm. The radio-frequency switch circuit further includesan amplitude-phase cancelling block implemented across one or moretransistors of each switch arm, and configured such that a thirdharmonic resulting from an ON state of the first switch arm issubstantially canceled by a third harmonic resulting from an OFF stateof the second switch arm.

In some embodiments, the amplitude-phase cancelling block can include afirst combination arranged in series with a second combination, witheach of the first and second combinations including a series combinationof a diode and a capacitance in a parallel arrangement with aresistance. The diode of the first combination can be implemented in ananti-parallel manner relative to the diode of the second combination.The diodes of the first and second combinations can be configured togenerate harmonics by voltage distributed by a voltage divider formed bythe resistances of the first and second combinations. The capacitancesof the first and second combinations can be configured to providerespective phase shifts of the harmonics.

In some embodiments, the anti-parallel configuration of the diodes ofthe first and second combinations can result in the amplitude-phasecancelling block generating substantially nil amount of a secondharmonic. In some embodiments, the amplitude-phase cancelling blocksassociated with the first and second switch arms can be selected so thata third harmonic associated with the first switch arm is substantiallycanceled by a third harmonic associated with the second switch arm.

In some embodiments, each diode of the amplitude-phase cancelling blockcan be implemented as a field-effect transistor configured as a diode,where source and drain of the field-effect transistor are coupled. Insome embodiments, bodies of the field-effect transistors can be coupled.In some embodiments, a gate-drain capacitance or a gate-sourcecapacitance of each field-effect transistor can be configured to providethe respective phase shifts of the harmonics.

In some embodiments, the amplitude-phase cancelling block can beimplemented with the respective switch arm in a symmetric manner. Insome embodiments, the number of transistors between the phase cancellingblock and the first node can be the same as the number of transistorsbetween the phase cancelling block and the second node. In someembodiments, each switch arm can be configured to be operated with thefirst node as an input node, or with the second node as an input node.

In some embodiments, the amplitude-phase cancelling block can beimplemented with the respective switch arm in an asymmetric manner. Insome embodiments, each switch arm can be configured to be operated withone of the first and second nodes as an input node, and the other nodeas an output node.

In some embodiments, at least the plurality of transistors can beimplemented as field-effect transistors. In some embodiments, thefield-effect transistors can be implemented as silicon-on-insulatordevices. In some embodiments, at least some of the amplitude-phasecancelling blocks can be implemented as field-effect transistor likedevices.

In accordance with a number of implementations, the present disclosurerelates to a semiconductor die that includes a substrate and aradio-frequency switch circuit implemented on the substrate. Theradio-frequency switch circuit includes first and second switch arms,with each switch arm including a plurality of transistors arranged inseries to form a stack between a first node and a second node. The firstnode of the first switch arm is coupled to the first node of the secondswitch arm. The radio-frequency switch circuit further includes anamplitude-phase cancelling block implemented across one or moretransistors of each switch arm, and configured such that a thirdharmonic resulting from an ON state of the first switch arm issubstantially canceled by a third harmonic resulting from an OFF stateof the second switch arm.

In some embodiments, the substrate can include a silicon-on-insulatorsubstrate.

In some teachings, the present disclosure relates to a radio-frequencymodule that includes a packaging substrate configured to support aplurality of components, and a radio-frequency switch circuitimplemented on the packaging substrate. The radio-frequency switchcircuit includes first and second switch arms, with each switch armincluding a plurality of transistors arranged in series to form a stackbetween a first node and a second node. The first node of the firstswitch arm is coupled to the first node of the second switch arm. Theradio-frequency switch circuit further includes an amplitude-phasecancelling block implemented across one or more transistors of eachswitch arm, and configured such that a third harmonic resulting from anON state of the first switch arm is substantially canceled by a thirdharmonic resulting from an OFF state of the second switch arm.

In some embodiments, at least the first and second switch arms can beimplemented on a semiconductor die. In some embodiments, substantiallyall of the radio-frequency switch circuit can be implemented on thesemiconductor die. In some embodiments, the radio-frequency module canbe a switch module.

According to a number of implementations, the present disclosure relatesto a wireless device that includes a transceiver and a front-end moduleconfigured to support routing of one or more signals associated with thetransceiver. The front-end module includes a radio-frequency switchcircuit having first and second switch arms, with each switch armincluding a plurality of transistors arranged in series to form a stackbetween a first node and a second node. The first node of the firstswitch arm is coupled to the first node of the second switch arm. Theradio-frequency switch circuit further includes an amplitude-phasecancelling block implemented across one or more transistors of eachswitch arm, and configured such that a third harmonic resulting from anON state of the first switch arm is substantially canceled by a thirdharmonic resulting from an OFF state of the second switch arm. Thewireless device further includes an antenna in communication with thefront-end module and configured to support operation of the wirelessdevice with the one or more signals.

For purposes of summarizing the disclosure, certain aspects, advantagesand novel features of the inventions have been described herein. It isto be understood that not necessarily all such advantages may beachieved in accordance with any particular embodiment of the invention.Thus, the invention may be embodied or carried out in a manner thatachieves or optimizes one advantage or group of advantages as taughtherein without necessarily achieving other advantages as may be taughtor suggested herein.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 depicts a switch circuit or device having an amplitude-phasecancelling block (APCB).

FIG. 2 shows that in some embodiments, the switch of FIG. 1 can includea switch arm having a plurality of switching transistors arranged inseries.

FIG. 3 shows an example of a switch arm having a plurality of transistorblocks arranged in series.

FIG. 4 shows that in some embodiments, an amplitude-phase cancellingblock (APCB) having one or more features as described herein can includea first combination of a diode, a capacitance, and a resistance, and asecond combination of a diode, a capacitance, and a resistance.

FIG. 5 shows an example of an APCB that can be implemented to providethe functionalities associated with the APCB of FIG. 4.

FIG. 6 shows that in some embodiments, an APCB having one or morefeatures as described herein can include a plurality of blocks arrangedin a stack configuration between first and second nodes.

FIG. 7 shows that in some embodiments, an APCB having one or morefeatures as described herein can be implemented in a voltage dividerconfiguration between first and second nodes.

FIG. 8 shows an example of a switch circuit having a stack of transistorblocks arranged in series between first and second nodes so as to form aswitch arm.

FIG. 9 shows a switch circuit implemented as a double-pole-double-throw(DPDT) switch having two inputs and two outputs.

FIG. 10 shows that in some embodiments, a switch circuit can include oneor more switch arms, with each switch arm having an APCB implemented inan asymmetric manner.

FIG. 11 shows a plot of a 3rd harmonic amplitude for an ON arm and aplot of a 3rd harmonic amplitude for an OFF arm.

FIG. 12 shows that for the ON and OFF arms of FIG. 11, the phases of the3rd harmonics are opposite, at least when the 3rd harmonic amplitudes ofthe ON and OFF arms are the same.

FIG. 13 shows plots of 2nd harmonic amplitude distributions for a switchcircuit without APCB functionality and for a switch circuit having APCBfunctionality.

FIG. 14 shows an example of an improvement in performance with respectto 3rd harmonics.

FIG. 15 shows that in some embodiments, a switch circuit having one ormore features as described herein can be implemented on a die.

FIG. 16 shows that in some embodiments, a switch circuit having one ormore features described herein can be implemented in a packaged module.

FIG. 17 depicts an example wireless device having one or moreadvantageous features described herein.

DETAILED DESCRIPTION OF SOME EMBODIMENTS

The headings provided herein, if any, are for convenience only and donot necessarily affect the scope or meaning of the claimed invention.

Switches are important components in wireless mobile devices. Switchessuch as SOI MOSFET (silicon-on-insulator metal-oxide-semiconductorfield-effect transistor) switches are commonly utilized for low-losshigh frequency switching applications. Since these switches are made assemiconductor devices, they can generate harmonics naturally whenradio-frequency (RF) power goes through the switches. Beside lowinsertion loss and high isolation, performance parameters such as 3rdharmonics and IP3 are important factors for wireless applications suchas LTE applications. By way of an example, a requirement of 3foharmonics at a cellular band B17 can be specified to be below −105 dB.Such a performance requirement is difficult to meet for a switch withouta filter.

There are several ways to reduce harmonics associated with switches. Forexample, an increase in the size of FETs in a switch can improve thepower handling capability, so that same input power will generate lessharmonics from big FETs, when compared to smaller FETs devices. However,such an increase in size of the FETs can slow down switching speed of aswitch. Moreover, size of switches is under design pressure to bepackaged smaller due to limited spaces in mobile devices.

In another example, a filter can be added between a switch and anantenna. However, adding a filter also adds loss to a signal. It is alsonoted that it is typically not practical to utilize a diplexer to rejectIP3 between a switch and an antenna.

FIG. 1 depicts a switch circuit or device 100 (also referred to as aswitch) having an amplitude-phase cancelling block (APCB) 102. For thepurpose of description, a block can be a circuit having one or moreelements. Examples of such an APCB are described herein in greaterdetail.

FIG. 2 shows that in some embodiments, the switch 100 of FIG. 1 caninclude a switch arm 104 having a plurality of switching transistors(e.g., FETs) arranged in series. An APCB 102 having one or more featuresas described herein can be coupled to such a switch arm to provide adesired functionality.

In the example of FIG. 2, the switch 100 is shown to include first andsecond nodes 106, 108. In some embodiments, the first node 106 can be aninput node for a signal, and the second node 108 can be an output nodefor the signal. It will be understood that the switch 100 may or may notoperate in reverse.

FIG. 3 shows an example of a switch arm 104 having a plurality oftransistor blocks 110 arranged in series. For the purpose ofdescription, it will be understood that each transistor block 110 caninclude one or more FETs. For example, if a plurality of FETs are in atransistor block 110, such FETs can be arranged in parallel. It willalso be understood that a given switch arm can include more or lessnumber of transistor blocks than the two example blocks depicted in FIG.3.

Referring to FIG. 3, each transistor block 110 can be turned ON or OFFby controlling a voltage applied to gate(s) of the FET(s). In someembodiments, all of the transistor blocks 110 in the switch arm 104 canbe turned ON or OFF together to result in the switch arm itself being ONor OFF.

In the example of FIG. 3, each FET is depicted as having its bodycoupled (112) to the gate through a diode. It will be understood that aswitch having one or more features as described herein can have its FETsconfigured in other manners, including a configuration without thebody-gate coupling, a configuration in which other portions of the FETare coupled, etc.

It is noted that in a switch arm such as the example switch arm 104 ofFIG. 3, 3rd harmonics can be generated by series FETs in the ON state.In such a state, voltage drop on series FETs are low because of lowon-resistance (Ron) of the FETs.

It is further noted that the 3rd harmonics typically result from 3rdorder component of an RF current flowing through the FETs. Because theFETs in the OFF state stops RF voltage, one can couple anamplitude-phase cancelling block (APCB) that includes anti-paralleldiodes and resistors, with the FETs. In such a configuration, thediodes, resistors, and the coupling location of the APCB can be selectedsuch that the 3rd order harmonics are canceled or reduced.

FIG. 4 shows that in some embodiments, an amplitude-phase cancellingblock (APCB) 102 having one or more features as described herein caninclude a first combination of a diode 130 a, a capacitance 132 a, and aresistance Ra, and a second combination of a diode 130 b, a capacitance132 b, and a resistance Rb. Such an arrangement of the first and secondcombinations can be implemented between first and second nodes 122, 124.

In such an arrangement, the diodes 130 a, 130 b can generate harmonicsby voltage distributed by a respective voltage divider formed by thecorresponding resistances Ra, Rb. The capacitances 132 a, 132 b canshift phases of such harmonics. Thus, the first and second combinations,arranged so that the diodes 130 a, 130 b are in an anti-parallelconfiguration, do not generate, or generate a reduced amount of, anoverall second harmonics. Each of the first and second combinations cangenerate harmonics amplitude and phase by adjustment of the respectivecombination's resistance.

FIG. 5 shows an example of an APCB 102 that can be implemented toprovide the functionalities associated with the APCB 102 of FIG. 4. Inthe example of FIG. 5, a field-effect transistor (FET) device can beconfigured as a diode. Thus, a first FET device 120 a can function asthe diode 130 a, and a second FET device 120 b can function as the diode130 b of FIG. 4.

More particularly, in each of the first and second FET devices 120 a,120 b, the source and drain of the transistor can be coupled. Further,the body of the transistor of the first FET device 120 a can be coupledto the body of the transistor of the second FET device 120 b.

In some embodiments, each of the first and second FET devices 120 a, 120b can be configured so that its gate-drain capacitance (Cgd) and/orgate-source capacitance (Cgs) provide an appropriate harmonic phaseshift (e.g., similar to phase shifting provided by the capacitance 132 aor 132 b in FIG. 4). It will be understood that the harmonic phaseshifting capacitance of the first FET device 120 a may or may not be thesame as the harmonic phase shifting capacitance of the second FET device120 b.

In the example of FIG. 4, at least some of the harmonics amplitude andphase of each of the first and second combinations can be adjusted bythe respective resistance. In the example of FIG. 5, such harmonicsamplitude and phase of each FET device (120 a or 120 b) can be adjustedby the respective resistance (Ra or Rb), the corresponding transistor'speriphery configuration, and/or the gate length of the transistor.

FIG. 6 shows that in some embodiments, an APCB 102 having one or morefeatures as described herein can include a plurality of blocks arrangedin a stack configuration between first and second nodes 122, 124. In theexample of FIG. 6, two blocks are arranged in series between the firstand second nodes 122, 124, with each block being similar to the block102 of FIG. 5.

FIG. 7 shows that in some embodiments, an APCB 102 having one or morefeatures as described herein can be implemented in a voltage dividerconfiguration between first and second nodes 122, 124. In the example ofFIG. 7, three resistors R1, R2, R3 are shown to be arranged in seriesbetween the first and second nodes 122, 124. A first FET device 120 a, asecond FET device 120 b, a third FET device 120 c, and a fourth FETdevice 120 d, with each being configured as described herein inreference to FIGS. 4 and 5, can be arranged relative to the threeresistors R1, R2, R3 so as to provide the voltage divider configuration.

For example, the gate of the transistor of the first FET device 120 acan be coupled to the first node 122, and the connected-source/drain ofthe transistor of first FET device 120 a can be coupled to the gate ofthe transistor of the second FET device 120 b. Theconnected-source/drain of the transistor of the second FET device 120 bcan be coupled to a node between the first resistor R1 and the secondresistor R2.

Similarly, the third and fourth FET devices 120 c, 120 d can be arrangedso as to provide an anti-parallel configuration with respect to thefirst and second FET devices 120 a, 120 b. More particularly, the gateof the transistor of the fourth FET device 120 d can be coupled to thesecond node 124, and the connected-source/drain of the transistor of thefourth FET device 120 d can be coupled to the gate of the transistor ofthe third FET device 120 c. The connected-source/drain of the transistorof the third FET device 120 c can be coupled to a node between the thirdresistor R3 and the second resistor R2.

In the example of FIG. 7, the body of the transistor of the first FETdevice 120 a can be coupled to the body of the transistor of the thirdFET device 120 c. Similarly, the body of the transistor of the secondFET device 120 b can be coupled to the body of the transistor of thefourth FET device 120 d.

FIG. 8 shows an example of a switch circuit 100 having a stack oftransistor blocks (110 a to 110 l) arranged in series between first andsecond nodes 106, 108 so as to form a switch arm 104. In someembodiments, each transistor block can be similar to the transistorblock 110 described herein in reference to FIG. 3. In the example ofFIG. 8, there are twelve of such transistor blocks in the switch arm104; however, it will be understood that the switch arm 104 can havedifferent numbers of transistor blocks.

In the example of FIG. 8, the switch circuit 100 can further include anAPCB 102 implemented for at least some of the transistor blocks of theswitch arm 104. For example, the APCB 102 of FIG. 8 is shown to includea stack of two blocks, similar to the example of FIG. 6. Such an APCBcan be arranged between nodes 122, 124 that are on left and right sidesof the two middle transistor blocks 110 f, 110 g, respectively. Thus,the APCB 102 with the two blocks are arranged to be parallel with thetwo middle transistor blocks 110 f, 110 g.

In the example of FIG. 8, each of the five transistor blocks (110 a to110 e) on the left side of the two middle transistor blocks 110 f, 110 g(i.e., five transistor blocks between the nodes 106 and 122) is shown tohave a resistive coupling between its source and drain nodes. Similarly,each of the five transistor blocks (110 h to 110 l) on the right side ofthe two middle transistor blocks 110 f, 110 g (i.e., five transistorblocks between the nodes 124 and 108) is shown to have a resistivecoupling between its source and drain nodes.

In the example of FIG. 8, the gates of the twelve transistor blocks (110a to 110 l) of the switch arm 104 are shown to be provided with a gatevoltage in a distributed manner from a voltage node 130.

The switch circuit 100 in FIG. 8 is an example of a symmetricconfiguration where an APCB 102 is implemented at or near the middle ofa stack of transistor blocks. In such a symmetric configuration, thenumber of transistor block(s) on one side of the APCB 102 can be thesame or approximately the same as the number of transistor block(s) onother side of the APCB 102.

In some embodiments, such a symmetric configuration of the switchcircuit 100 can be desirable where the switch circuit 100 is utilized inboth directions. For example, and referring to FIG. 8, the switchcircuit 100 can be utilized so that an RF signal is input into the node106 and output through the node 108, or in reverse so that an RF signalis input into the node 108 and output through the node 106.

In some embodiments, the switch circuit 100 (having one switch arm 104)of FIG. 8 can be implemented as a single-pole-single-throw (SPST)switch. Such an SPST switch can benefit from one or more features of theAPCB 102 as described herein.

In some embodiments, one or more features of the present disclosure canalso be implemented in other types of switches. In general, anM-pole-N-throw (MPNT, where each of M and N is a positive integer)switch can include one or more amplitude-phase cancelling blocks (APCBs)for one or more switch arms. As a more specific example, FIG. 9 shows aswitch circuit 100 implemented as a double-pole-double-throw (DPDT)switch having two inputs RFin1, RFin2 and two outputs RFout1, RFout2.The first input RFin1 is coupled to the first output RFout1 through aswitch arm 104 a, and also coupled to the second output RFout2 through aswitch arm 104 b. The second input RFin2 is coupled to the first outputRFout1 through a switch arm 104 c, and also coupled to the second outputRFout2 through a switch arm 104 d.

In the example of FIG. 9, an APCB (102 a, 102 b, 102 c or 102 d) isshown to be implemented for each switch arm (104 a, 104 b, 104 c or 104d, respectively). Such an APCB is shown to be implemented to provide asymmetric functionality for the respective switch arm, similar to theexample of FIG. 8, thereby supporting a reverse operation (e.g., wherethe inputs/outputs operate as outputs/inputs) with similar performancelevels.

FIG. 10 shows that in some embodiments, a switch circuit 100 can includeone or more switch arms, with each switch arm having an APCB implementedin an asymmetric manner. Such a configuration can be desirable when theswitch circuit 100 is utilized in a manner where an input signal flowsin one direction.

For example, suppose the switch circuit 100 of FIG. 10 includes X switcharms 104 a, 104 b, 104 c, . . . , 104 x, with one sides of the switcharms being coupled to a common node RFC (e.g., on the left side of eachswitch arm in FIG. 10) and the other side of each arm being coupled to aseparate node (e.g., RF1, RF2, RF3, RFx on the right side of each switcharm in FIG. 10). Such a switch circuit can be utilized as asingle-pole-X-throw (SPXT) switch, with the common node RFC being thepole and the separate nodes RF1, RF2, RF3, RFx being the throws.

In the example of FIG. 10, each switch arm is shown to include an APCBon the common node (RFC) side. More particularly, an APCB 102 a is shownbe implemented across the two end transistor blocks on the common node(RFC) side of the switch arm 104 a, an APCB 102 b is shown beimplemented across the two end transistor blocks on the common node(RFC) side of the switch arm 104 b, etc., and an APCB 102 x is shown beimplemented across the two end transistor blocks on the common node(RFC) side of the switch arm 104 x.

In the example of FIG. 10, the switch circuit 100 can be utilized sothat a signal flows into the common node RFC and through a respectiveswitch arm, and out through the corresponding separate node. The switchcircuit 100 can also be utilized so that a signal flows into arespective separate node and through the corresponding switch arm, andout through the common node RFC.

In the examples of FIGS. 9 and 10, each switch circuit includes aplurality of switch arms that share a node. For example, in FIG. 9,switch arms 104 a and 104 b share a node RFin1. In another example, inFIG. 10, all of the switch arms RF1, RF2, . . . , RFx share a commonnode RFC. In such switch circuits, one of such switch arms can be in anON state, and another switch arm can be in an OFF state.

It is also noted that for any switch arm (with or without another switcharm that shares a node as in the examples of FIGS. 9 and 10), a shuntarm can be provided from an end node of the switch arm. In such aconfiguration, when the switch arm is ON, the shunt arm can be OFF; andwhen the switch arm is OFF, the shunt arm can be ON.

It is noted that 3rd harmonics can be generated by series switchtransistors (e.g., FETs) in ON states; and in ON states, voltage drop onseries FETs is relatively low because of low on resistance (Ron) of theFETs. The 3rd harmonics typically arise from 3rd order component of anRF current flowing through the FETs. It is further noted that the OFFFETs handle RF voltage. Thus, an amplitude-phase cancelling functionblock (APCB) as described herein can allow cancellation or significantreduction of 3rd order harmonics in switch circuits.

For example, FIG. 11 shows a plot of a 3rd harmonic amplitude for an ONarm (dashed line), and a plot of a 3rd harmonic amplitude for an OFF arm(solid line). Each of the ON and OFF arms is assumed to include an APCBas described herein. As seen in FIG. 11, the ON arm (with APCB) and theOFF arm (with APCB) generate 3rd harmonic amplitudes that are similar.It is noted that at the example RF power value of approximately 25, the3rd harmonic amplitudes of the ON and OFF arms are approximately thesame.

FIG. 12 shows that for the ON and OFF arms of FIG. 11, the phases of the3rd harmonics are opposite, at least when the 3rd harmonic amplitudes ofthe ON and OFF arms are approximately the same. For example, at the RFpower value of approximately 25 (where the 3rd harmonic amplitudes ofthe ON and OFF arms are approximately the same as shown in FIG. 11), theOFF arm has a 3rd harmonic phase of approximately +95 degrees, and theON arm has a 3rd harmonic phase of approximately −90 degrees.Accordingly, the 3rd harmonic generated in one arm (e.g., the ON arm)can be substantially canceled by the 3rd harmonic generated in the otherarm (e.g., the OFF arm).

FIG. 13 shows plots of 2nd harmonic amplitude distributions for a switchcircuit without APCB functionality and for a switch circuit having APCBfunctionality. One can see that performance with respect to 2nd harmonicis generally not impacted by the APCB functionality. As describedherein, the anti-parallel combination of diodes in an APCB can result inthe APCB not generating 2nd harmonics while improving performance withrespect to 3rd harmonics.

FIG. 14 shows an example of an improvement in performance with respectto 3rd harmonics. In FIG. 14, a 3rd harmonic amplitude distribution isshown for a switch circuit without APCB functionality. Also shown is a3rd harmonic amplitude distribution for a switch circuit with APCBfunctionality. As one can see, the 3rd harmonic is suppressedsignificantly at a selected RF power.

FIG. 15 shows that in some embodiments, a switch circuit 100 having oneor more features as described herein can be implemented on a die 300.Such a die can include a substrate 302 such as, for example,silicon-on-insulator (SOI) substrate. In such a configuration, theswitch circuit 100 can include one or more stacks of FETs implemented asSOI devices. In some embodiments, at least some of the switch circuit100 of FIG. 15 can be configured to provide APCB functionality asdescribed herein.

FIG. 16 shows that in some embodiments, a switch circuit having one ormore features described herein can be implemented in a packaged module400. Such a packaged module can include a packaging substrate 402configured to receive a plurality of components. At least some of thecomponents mounted on the packaging substrate 402 can include a die 300such as the die 300 of FIG. 15.

In some implementations, a device and/or a circuit having one or morefeatures described herein can be included in an RF device such as awireless device. Such a device and/or a circuit can be implementeddirectly in the wireless device, in a modular form as described herein,or in some combination thereof. In some embodiments, such a wirelessdevice can include, for example, a cellular phone, a smart-phone, ahand-held wireless device with or without phone functionality, awireless tablet, etc.

FIG. 17 depicts an example wireless device 900 having one or moreadvantageous features described herein. In the context of variousswitches as described herein, a switch 920 and a bias/coupling circuit950 can be part of a module 910. In some embodiments, such a switchmodule can support, for example, multi-band multi-mode operations of thewireless device 900.

In the example wireless device 900, a power amplifier (PA) assembly 916having a plurality of PAs can provide one or more amplified RF signalsto the switch 920 (via an assembly of one or more duplexers 918), andthe switch 920 can route the amplified RF signal(s) to one or moreantennas. The PAs 916 can receive corresponding unamplified RF signal(s)from a transceiver 914 that can be configured and operated in knownmanners. The transceiver 914 can also be configured to process receivedsignals. The transceiver 914 is shown to interact with a basebandsub-system 910 that is configured to provide conversion between dataand/or voice signals suitable for a user and RF signals suitable for thetransceiver 914. The transceiver 914 is also shown to be connected to apower management component 906 that is configured to manage power forthe operation of the wireless device 900. Such a power managementcomponent can also control operations of the baseband sub-system 910 andthe module 910.

The baseband sub-system 910 is shown to be connected to a user interface902 to facilitate various input and output of voice and/or data providedto and received from the user. The baseband sub-system 910 can also beconnected to a memory 904 that is configured to store data and/orinstructions to facilitate the operation of the wireless device, and/orto provide storage of information for the user.

In some embodiments, the duplexers 918 can allow transmit and receiveoperations to be performed simultaneously using a common antenna (e.g.,924). In FIG. 17, received signals are shown to be routed to “Rx” pathsthat can include, for example, one or more low-noise amplifiers (LNAs).

A number of other wireless device configurations can utilize one or morefeatures described herein. For example, a wireless device does not needto be a multi-band device. In another example, a wireless device caninclude additional antennas such as diversity antenna, and additionalconnectivity features such as Wi-Fi, Bluetooth, and GPS.

Unless the context clearly requires otherwise, throughout thedescription and the claims, the words “comprise,” “comprising,” and thelike are to be construed in an inclusive sense, as opposed to anexclusive or exhaustive sense; that is to say, in the sense of“including, but not limited to.” The word “coupled”, as generally usedherein, refers to two or more elements that may be either directlyconnected, or connected by way of one or more intermediate elements.Additionally, the words “herein,” “above,” “below,” and words of similarimport, when used in this application, shall refer to this applicationas a whole and not to any particular portions of this application. Wherethe context permits, words in the above Description using the singularor plural number may also include the plural or singular numberrespectively. The word “or” in reference to a list of two or more items,that word covers all of the following interpretations of the word: anyof the items in the list, all of the items in the list, and anycombination of the items in the list.

The above detailed description of embodiments of the invention is notintended to be exhaustive or to limit the invention to the precise formdisclosed above. While specific embodiments of, and examples for, theinvention are described above for illustrative purposes, variousequivalent modifications are possible within the scope of the invention,as those skilled in the relevant art will recognize. For example, whileprocesses or blocks are presented in a given order, alternativeembodiments may perform routines having steps, or employ systems havingblocks, in a different order, and some processes or blocks may bedeleted, moved, added, subdivided, combined, and/or modified. Each ofthese processes or blocks may be implemented in a variety of differentways. Also, while processes or blocks are at times shown as beingperformed in series, these processes or blocks may instead be performedin parallel, or may be performed at different times.

The teachings of the invention provided herein can be applied to othersystems, not necessarily the system described above. The elements andacts of the various embodiments described above can be combined toprovide further embodiments.

While some embodiments of the inventions have been described, theseembodiments have been presented by way of example only, and are notintended to limit the scope of the disclosure. Indeed, the novel methodsand systems described herein may be embodied in a variety of otherforms; furthermore, various omissions, substitutions and changes in theform of the methods and systems described herein may be made withoutdeparting from the spirit of the disclosure. The accompanying claims andtheir equivalents are intended to cover such forms or modifications aswould fall within the scope and spirit of the disclosure.

1. A radio-frequency switch circuit comprising: first and second switcharms, each switch arm including a plurality of transistors arranged inseries to form a stack between a first node and a second node, the firstnode of the first switch arm coupled to the first node of the secondswitch arm; and an amplitude-phase cancelling block implemented acrossone or more transistors of each switch arm, and configured such that athird harmonic resulting from an ON state of the first switch arm issubstantially canceled by a third harmonic resulting from an OFF stateof the second switch arm.
 2. The radio-frequency switch circuit of claim1 wherein the amplitude-phase cancelling block includes a firstcombination arranged in series with a second combination, each of thefirst and second combinations including a series combination of a diodeand a capacitance in a parallel arrangement with a resistance, the diodeof the first combination implemented in an anti-parallel manner relativeto the diode of the second combination.
 3. The radio-frequency switchcircuit of claim 2 wherein the diodes of the first and secondcombinations are configured to generate harmonics by voltage distributedby a voltage divider formed by the resistances of the first and secondcombinations.
 4. The radio-frequency switch circuit of claim 3 whereinthe capacitances of the first and second combinations are configured toprovide respective phase shifts of the harmonics.
 5. The radio-frequencyswitch circuit of claim 4 wherein the anti-parallel configuration of thediodes of the first and second combinations results in theamplitude-phase cancelling block generating substantially nil amount ofa second harmonic.
 6. The radio-frequency switch circuit of claim 4wherein the amplitude-phase cancelling blocks associated with the firstand second switch arms are selected so that a third harmonic associatedwith the first switch arm is substantially canceled by a third harmonicassociated with the second switch arm.
 7. The radio-frequency switchcircuit of claim 4 wherein each diode of the amplitude-phase cancellingblock is implemented as a field-effect transistor configured as a diode,where source and drain of the field-effect transistor are coupled. 8.The radio-frequency switch circuit of claim 7 wherein bodies of thefield-effect transistors are coupled.
 9. The radio-frequency switchcircuit of claim 7 wherein a gate-drain capacitance or a gate-sourcecapacitance of each field-effect transistor is configured to provide therespective phase shifts of the harmonics.
 10. The radio-frequency switchcircuit of claim 1 wherein the amplitude-phase cancelling block isimplemented with the respective switch arm in a symmetric manner. 11.The radio-frequency switch circuit of claim 10 wherein the number oftransistors between the phase cancelling block and the first node is thesame as the number of transistors between the phase cancelling block andthe second node.
 12. The radio-frequency switch circuit of claim 10wherein each switch arm is configured to be operated with the first nodeas an input node, or with the second node as an input node.
 13. Theradio-frequency switch circuit of claim 1 wherein the amplitude-phasecancelling block is implemented with the respective switch arm in anasymmetric manner.
 14. The radio-frequency switch circuit of claim 13wherein each switch arm is configured to be operated with one of thefirst and second nodes as an input node, and the other node as an outputnode.
 15. The radio-frequency switch circuit of claim 1 wherein at leastthe plurality of transistors are implemented as field-effecttransistors.
 16. The radio-frequency switch circuit of claim 15 whereinthe field-effect transistors are implemented as silicon-on-insulatordevices.
 17. The radio-frequency switch circuit of claim 15 wherein atleast some of the amplitude-phase cancelling blocks are implemented asfield-effect transistor like devices.
 18. A semiconductor diecomprising: a substrate; and a radio-frequency switch circuitimplemented on the substrate, and having first and second switch arms,each switch arm including a plurality of transistors arranged in seriesto form a stack between a first node and a second node, the first nodeof the first switch arm coupled to the first node of the second switcharm, the radio-frequency switch circuit further including anamplitude-phase cancelling block implemented across one or moretransistors of each switch arm, and configured such that a thirdharmonic resulting from an ON state of the first switch arm issubstantially canceled by a third harmonic resulting from an OFF stateof the second switch arm.
 19. The semiconductor die of claim 18 whereinthe substrate includes a silicon-on-insulator substrate.
 20. Aradio-frequency module comprising: a packaging substrate configured tosupport a plurality of components; and a radio-frequency switch circuitimplemented on the packaging substrate, and having first and secondswitch arms, each switch arm including a plurality of transistorsarranged in series to form a stack between a first node and a secondnode, the first node of the first switch arm coupled to the first nodeof the second switch arm, the radio-frequency switch circuit furtherincluding an amplitude-phase cancelling block implemented across one ormore transistors of each switch arm, and configured such that a thirdharmonic resulting from an ON state of the first switch arm issubstantially canceled by a third harmonic resulting from an OFF stateof the second switch arm.
 21. (canceled)
 22. (canceled)
 23. (canceled)24. (canceled)